The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1992
Filed:
Apr. 04, 1991
Applicant:
Inventors:
Allen M Barnett, Newark, DE (US);
John B Berryhill, Logan, UT (US);
Assignee:
University of Delaware, Newark, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 16 ; 357 55 ; 357 56 ;
Abstract
A high-speed heterojunction light-emitting diode is formed by providing a dielectric layer on a heavily doped semiconductor substrate having short minority carrier lifetime. A semiconductor layer of opposite conductivity to the substrate is epitaxially grown through vias in the dielectric layer. This results in a junction area equal to the useful light-emitting area. An electrical contact is formed on the laterally overgrown area of the epitaxially grown material. The diode manufacture is compatible with planar processing techniques commonly used in integrated circuit manufacture.