Essex Junction, VT, United States of America

John A Gabric


Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 1986-2013

where 'Filed Patents' based on already Granted Patents

7 patents (USPTO):

Title: Innovations of John A. Gabric: A Pioneer in Phase Change Memory Technology

Introduction

John A. Gabric, hailing from Essex Junction, Vermont, is an accomplished inventor with a notable portfolio comprising seven patents. His innovative contributions primarily revolve around advancements in phase change memory technology, which have significant implications for the future of computing.

Latest Patents

Among Gabric's most recent inventions is a phase change memory (PCM) cycle timer and associated method. This patented technology encompasses a system that includes at least one reference phase change element (PCE). It effectively performs a write operation on the reference PCE, which continuously senses and provides a resistance reading throughout a specific settling time. This innovation offers enhancements in the efficiency and reliability of memory systems.

Career Highlights

John A. Gabric is currently affiliated with the International Business Machines Corporation (IBM), a prominent player in the technology sector. His career at IBM has allowed him to engage in pioneering research and development efforts, positioning him as an influential figure within the company and the technology community.

Collaborations

Throughout his professional journey, Gabric has collaborated with talented individuals such as Mark C. Lamorey and Thomas M. Maffitt. These partnerships have fostered a dynamic and innovative working environment, enabling the team to push the boundaries of technology further.

Conclusion

John A. Gabric's contributions to the field of phase change memory are invaluable, demonstrating his commitment to innovation and advancement. With several patents to his name and a collaborative spirit at IBM, Gabric continues to shape the future of memory technology, leaving a lasting impact on the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…