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For the Inventor, By the Inventor

Yorktown Heights, NY, United States of America

Johannes M Stork

This inventor holds 10 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1988-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Johannes M Stork. Retrieved from https://idiyas.com/inventor/johannes-m-stork

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 9

Forward Citations = 247(Granted Patents)


Company Filing History:

goldMedal10 out of 166,351 
 
International Business Machines Corporation
 patents

Years Active: 1988-1999

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10 patents (USPTO):Explore Patents
1. 6004137 - Method of making graded channel effect transistor (1999-12-21),
2. 5821577 - Graded channel field effect transistor (1998-10-13),
3. 5777364 - Graded channel field effect transistor (1998-07-07),
4. 5352912 - Graded bandgap single-crystal emitter heterojunction bipolar transistor (1994-10-04),
5. 5340753 - Method for fabricating self-aligned epitaxial base transistor (1994-08-23),
6. 5119157 - Semiconductor device with self-aligned contact to buried subcollector (1992-06-02),
7. 5101256 - Bipolar transistor with ultra-thin epitaxial base and method of (1992-03-31),
8. 5024957 - Method of fabricating a bipolar transistor with ultra-thin epitaxial base (1991-06-18),
9. 4951115 - Complementary transistor structure and method for manufacture (1990-08-21),
10. 4738624 - Bipolar transistor structure with self-aligned device and isolation and (1988-04-19),

Title: Innovations of Johannes M Stork

Introduction

Johannes M Stork is a prominent inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work primarily focuses on enhancing the performance of field effect transistors.

Latest Patents

Among his latest patents is a method of making a graded channel effect transistor. This invention involves a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) that features a graded semiconductor alloy channel layer of silicon germanium. The germanium is graded to a single peak percentage level, which defines the location of the charge carriers within the layer. This innovation allows for the optimization of the transconductance of the device by controlling the location of the carriers within the channel. Another notable patent is the graded channel field effect transistor, which shares similar characteristics and benefits.

Career Highlights

Johannes M Stork is currently associated with International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of electronic devices.

Collaborations

Some of his notable coworkers include Bernard S Meyerson and David Louis Harame, who have collaborated with him on various projects within the field.

Conclusion

Johannes M Stork's contributions to semiconductor technology through his innovative patents have significantly impacted the industry. His work continues to inspire advancements in electronic device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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