Company Filing History:
Years Active: 1988-1999
Title: Innovations of Johannes M Stork
Introduction
Johannes M Stork is a prominent inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work primarily focuses on enhancing the performance of field effect transistors.
Latest Patents
Among his latest patents is a method of making a graded channel effect transistor. This invention involves a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) that features a graded semiconductor alloy channel layer of silicon germanium. The germanium is graded to a single peak percentage level, which defines the location of the charge carriers within the layer. This innovation allows for the optimization of the transconductance of the device by controlling the location of the carriers within the channel. Another notable patent is the graded channel field effect transistor, which shares similar characteristics and benefits.
Career Highlights
Johannes M Stork is currently associated with International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of electronic devices.
Collaborations
Some of his notable coworkers include Bernard S Meyerson and David Louis Harame, who have collaborated with him on various projects within the field.
Conclusion
Johannes M Stork's contributions to semiconductor technology through his innovative patents have significantly impacted the industry. His work continues to inspire advancements in electronic device performance.