Johannes Giesecke

Title: Johannes Giesecke: Innovator in Semiconductor Technology

Introduction

Johannes Giesecke is a notable inventor based in Freiburg, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for determining material parameters of doped semiconductor substrates.

Latest Patents

Giesecke holds a patent titled "Method for determining material parameters of a doped semiconductor substrate by measuring photoluminescent radiation." This patent outlines a process that includes applying electromagnetic excitation radiation to produce luminescent radiation in the semiconductor substrate. The method involves periodically modulating the temporal profile of the excitation radiation intensity, allowing for the determination of the rate of generation of charge carrier pairs in the substrate. The effective lifetime of the substrate is determined based on the time difference between the maximum of the generation rate and the corresponding maximum of the luminescent radiation intensity.

Career Highlights

Throughout his career, Johannes Giesecke has worked with prominent organizations, including the Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. and Sensopart Industriesensorik GmbH. His work has focused on advancing the understanding and application of semiconductor materials.

Collaborations

Giesecke has collaborated with notable colleagues such as Robert Weiß and Wilhelm Warta, contributing to various projects in the semiconductor field.

Conclusion

Johannes Giesecke's innovative work in semiconductor technology and his patent contributions highlight his role as a significant figure in the field. His methods for determining material parameters continue to influence advancements in semiconductor research and applications.