Tittmoning, Germany

Johann Heiss

This inventor holds 1 USPTO granted patent. Top assignee: Wacker-Chemie Gmbh. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Johann Heiss. Retrieved from https://idiyas.com/inventor/johann-heiss

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Johann Heiss: Innovator in Semiconductor Material Separation

Introduction

Johann Heiss is a notable inventor based in Tittmoning, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of air separation of polysilicon. His innovative approach has led to advancements that benefit the industry.

Latest Patents

Johann Heiss holds a patent for a device designed for the air separation of polysilicon. This separation device incorporates at least one blower device and at least one deflector device. It is specifically engineered to separate large fragments of semiconductor material from smaller fragments, enhancing efficiency in semiconductor processing. He has 1 patent to his name.

Career Highlights

Heiss is currently employed at Wacker-Chemie GmbH, a leading company in the chemical industry. His work at Wacker-Chemie has allowed him to apply his innovative ideas in a practical setting, contributing to the company's reputation for excellence in semiconductor materials.

Collaborations

Throughout his career, Johann Heiss has collaborated with talented individuals such as Matthäus Schantz and Dirk Flottmann. These collaborations have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Johann Heiss is a distinguished inventor whose work in air separation technology has made a significant impact on the semiconductor industry. His contributions continue to influence advancements in material processing, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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