This inventor holds 1 USPTO granted patent. Top assignee: U.S. Philips Corporation. Active years: 1986.
Company Filing History:
Years Active: 1986
Title: Johan W Bartsen: Innovator in Semiconductor Manufacturing
Introduction
Johan W Bartsen is a notable inventor based in Eindhoven, Netherlands. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in technology.
Latest Patents
Johan W Bartsen holds a patent for a method of manufacturing a semiconductor device comprising silicon. The method involves forming a depression with sidewalls extending below a first oxidation mask on the surface of a silicon body. After applying a second oxidation mask to the sidewalls of the depression, an oxidation treatment is performed. The design of the depression ensures that the sidewalls are flat and form an angle of 25 to 45 degrees with the original surface of the silicon body. The second oxidation mask consists of a 5 to 50 nm thick layer of silicon nitride or silicon oxinitride, which can be applied directly or separated from the surface by a layer of silicon oxide less than 5 nm thick. This innovative approach results in a very flat structure.
Career Highlights
Johan W Bartsen is associated with U.S. Philips Corporation, where he has contributed to various projects in semiconductor technology. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor devices.
Collaborations
Johan has collaborated with Jan G Dil, working together to advance their research and development efforts in the semiconductor field.
Conclusion
Johan W Bartsen's contributions to semiconductor manufacturing highlight his innovative spirit and dedication to advancing technology. His patent reflects a significant step forward in the industry, showcasing his expertise and commitment to excellence.