Tokyo, Japan

Joel Molina Reyes


Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Joel Molina Reyes in Non-Volatile Storage Technology

Introduction

Joel Molina Reyes is an accomplished inventor based in Tokyo, Japan. He has made significant contributions to the field of non-volatile storage technology. His innovative work focuses on developing storage elements that utilize ferroelectric materials, which are known for their low power consumption and high reliability.

Latest Patents

Joel Molina Reyes holds a patent for a non-volatile ferroelectric storage element and devices comprising them. This invention provides a non-volatile storage element that employs a ferroelectric material with excellent write/erase endurance. The design includes a first conductive layer, a second conductive layer, and a ferroelectric layer composed of a metal oxide. A buffer layer with oxygen ion conductivity is situated between the ferroelectric layer and the conductive layers. The invention also features an interface layer that enhances the dielectric constant compared to silicon oxide. The non-volatile storage device comprises a memory cell array with low-power-consumption ferroelectric memory elements, which can be configured in two-dimensional or three-dimensional arrangements.

Career Highlights

Joel Molina Reyes is affiliated with the Tokyo Institute of Technology, where he continues to advance his research in ferroelectric materials and storage technologies. His work has garnered attention for its potential applications in modern computing systems.

Collaborations

He has collaborated with notable colleagues, including Kuniyuki Kakushima and Hiroshi Funakubo, who share his passion for innovation in the field of materials science.

Conclusion

Joel Molina Reyes is a pioneering inventor whose work in non-volatile storage technology is shaping the future of data storage solutions. His contributions are vital for the development of efficient and reliable memory devices.

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