Chailly-en-Bière, France

Joel Journe

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2004.


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: The Innovations of Joel Journe

Introduction

Joel Journe is a notable inventor based in Chailly-en-Bière, France. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the development of advanced deposition reactors.

Latest Patents

Joel Journe holds a patent for a high throughput multideposition SACVD reactor. This innovative reactor enables the rapid thermal deposition of dielectric materials such as SiN, SiO, and SiON, as well as non-dielectric materials like polysilicon onto semiconductor substrates. The design allows for processing in a single chamber according to the desired sequence. The reactor features an improved susceptor that supports the wafer and a specialized gas distribution system for the deposition and cleaning processes. The susceptor is made from a standard carbon plate coated with a polysilicon film, which protects it from aggressive cleaning gases. This invention also includes a method for fabricating the improved susceptor.

Career Highlights

Joel Journe is associated with International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to push the boundaries of semiconductor manufacturing technology. He has been instrumental in developing solutions that enhance the efficiency and effectiveness of semiconductor processing.

Collaborations

Throughout his career, Joel has collaborated with notable colleagues such as Patrick Raffin and Christophe Balsan. These collaborations have contributed to the advancement of technology in the semiconductor industry.

Conclusion

Joel Journe's innovative work in the field of semiconductor technology, particularly with his multideposition SACVD reactor, showcases his expertise and commitment to advancing the industry. His contributions continue to influence the development of efficient semiconductor manufacturing processes.

Profile summary based on public USPTO records.
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