Company Filing History:
Years Active: 2017-2020
Title: Joanna Bettinger: Innovator in Memory Cell Technology
Introduction
Joanna Bettinger is a prominent inventor based in Oakland, CA (US). She has made significant contributions to the field of memory cell technology, holding a total of 6 patents. Her innovative work focuses on enhancing the performance and reliability of memory devices.
Latest Patents
One of her latest patents is titled "Resistive memory cell with intrinsic current control." This invention describes a two-terminal memory cell that features an intrinsic current limiting characteristic. The design includes a particle donor layer made of unstable or partially unstable metal compounds, which can release metal atoms in response to external stimuli. These metal atoms form a thin filament through an electrically-resistive switching medium, allowing the memory cell to switch to a conductive state while protecting it from excessive current.
Another notable patent is "Two-terminal memory electrode comprising a non-continuous contact surface." This invention provides an electrode for a two-terminal memory device, characterized by a contact surface with at least one surface discontinuity. The electrode can have a gap or break in its surface, which enhances its functionality in memory devices.
Career Highlights
Joanna Bettinger is currently employed at Crossbar, Inc., where she continues to develop cutting-edge memory technologies. Her work has positioned her as a key player in the advancement of memory cell innovations.
Collaborations
Throughout her career, Joanna has collaborated with talented individuals such as Sung Hyun Jo and Xianliang Liu. These partnerships have contributed to her success and the development of her innovative patents.
Conclusion
Joanna Bettinger is a trailblazer in the field of memory cell technology, with a strong portfolio of patents that reflect her innovative spirit. Her contributions are shaping the future of memory devices and enhancing their performance.