Company Filing History:
Years Active: 2019
Title: Joan E. Yater: Innovator in Vacuum Transistor Technology
Introduction
Joan E. Yater is a distinguished inventor based in Alexandria, VA (US). She has made significant contributions to the field of electronics, particularly in the development of advanced transistor technologies. Her innovative work has led to the granting of a patent that showcases her expertise and creativity.
Latest Patents
Joan E. Yater holds a patent for a "Vacuum transistor structure using graphene edge field emitter and screen electrode." This device features a substrate with a dielectric surface, a gate electrode, a drain electrode, and a source electrode that includes a conductive contact and a two-dimensional material edge. The design ensures that the source is adjacent to the gate, while the drain electrode is positioned such that it is not laterally between the edge and the gate electrode. Notably, the edge does not contact any other component of the device, and there is a clear line of sight or electron path from the edge to the drain electrode. This innovative structure enhances the performance and efficiency of vacuum transistors.
Career Highlights
Joan E. Yater is currently associated with the United States Navy, where she contributes her expertise in electronics and innovation. Her work has been instrumental in advancing the capabilities of electronic devices, particularly in military applications. With a focus on cutting-edge technology, she continues to push the boundaries of what is possible in her field.
Collaborations
Joan has collaborated with notable colleagues, including Jonathan L. Shaw and John Bradley Boos. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Joan E. Yater is a remarkable inventor whose work in vacuum transistor technology exemplifies her commitment to innovation. Her contributions not only advance the field of electronics but also inspire future generations of inventors.