Joachim Burtscher

Title: Innovations of Joachim Burtscher

Introduction

Joachim Burtscher is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work has been instrumental in advancing the capabilities of thyristor devices.

Latest Patents

One of his latest patents is titled "Thyristor having a plurality of emitter shorts in defined spatial." This invention provides a thyristor device equipped with a shorted emitter structure. The shorts are circularly formed zones of the base zone that extend through the emitter zone into electrical contact with the emitter electrode. Each of these zones is circular in cross-section and has a diameter of less than 20 micrometers. The spacing between these zones is such that the ratio of this spacing to the diameter of a circular area is greater than 3. Another significant patent is "Method of doping a semiconductor layer." In this invention, a semiconductor layer, such as an epitaxial layer on a suitable substrate, is subjected to controlled bombardment by neutrons. This process converts the atoms of the semiconductor layer into doping material atoms via nuclear reaction.

Career Highlights

Joachim Burtscher is associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to explore innovative solutions in semiconductor technology and contribute to the company's advancements in this field.

Collaborations

Throughout his career, Joachim has collaborated with esteemed colleagues such as Heinz-Herbert Arndt and Gustav Fischer. These collaborations have further enriched his work and led to the development of groundbreaking technologies.

Conclusion

Joachim Burtscher's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry and pave the way for future innovations.