Jo Anna Johnson

Title: Jo Anna Johnson: Innovator in Semiconductor Quantum Dot Technology

Introduction

Jo Anna Johnson is a prominent inventor based in Novi, MI (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of quantum dot lattices. Her innovative work has the potential to advance various applications in electronics and photonics.

Latest Patents

Jo Anna Johnson holds a patent for a method titled "Strain-engineered, self-assembled, semiconductor quantum dot lattices." This patent describes a technique for growing strain-engineered, self-assembled semiconductor quantum dots (QDs) into ordered lattices. The process involves the nucleation and positioning of QDs into lattices using a periodic sub-surface lattice built on a substrate, stressor layer, and spacer layer. The unit cell dimensions, orientation, and the number of QDs in the basis are tunable. Additionally, a 2D lattice can be replicated at periodic intervals along the growth direction to form a three-dimensional (3D) lattice of QDs.

Career Highlights

Jo Anna Johnson is affiliated with the University of California, where she continues her research and development in semiconductor technologies. Her work has garnered attention for its innovative approach and potential impact on the industry.

Collaborations

Jo Anna has collaborated with notable colleagues in her field, including Pierre M Petroff and Hao Lee. Their combined expertise contributes to the advancement of semiconductor research and development.

Conclusion

Jo Anna Johnson is a trailblazer in the field of semiconductor quantum dot technology. Her innovative patent and contributions to research highlight her role as a leading inventor in this cutting-edge area.