This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: The South China University of Technology. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Jixing Chai: Innovator in Germanium Sulfide Thin Film Technology
Introduction
Jixing Chai is a notable inventor based in Guangzhou, China. He has made significant contributions to the field of materials science, particularly in the development of germanium sulfide (GeS) single-crystal thin films. His innovative approach has implications for various applications in electronics and optoelectronics.
Latest Patents
Jixing Chai holds a patent for a preparation method for growing germanium sulfide (GeS) single-crystal thin film on a SiO substrate. This method involves several steps, including cleaning the substrate surface with acetone, ethanol, and deionized water. The substrate can be a Si/SiO substrate or a SiO glass substrate. The process includes photoetching the substrate, spin-coating a photoresist, and performing etching to create a groove pattern. A germanium (Ge) crystal layer is then deposited in the groove pattern, followed by placing the treated substrate into a chemical vapor deposition (CVD) device for growth. The growth source consists of high-purity sulfur (S) powder and high-purity Ge powder, resulting in a GeS single-crystal thin film on the SiO substrate. This preparation method allows for the growth of GeS single crystals with high crystalline quality and minimal surface roughness.
Career Highlights
Jixing Chai is affiliated with the South China University of Technology, where he continues to advance research in materials science. His work has garnered attention for its potential applications in various technological fields.
Collaborations
Jixing Chai collaborates with esteemed colleagues, including Guoqiang Li and Sheng Chen. Their combined expertise contributes to the advancement of research in the field of thin film technology.
Conclusion
Jixing Chai's innovative methods in growing germanium sulfide thin films represent a significant advancement in materials science. His contributions are paving the way for future developments in electronic and optoelectronic applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile