The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Dec. 30, 2021
South China University of Technology, Guangzhou, CN;
Guoqiang Li, Guangzhou, CN;
Sheng Chen, Guangzhou, CN;
Wenliang Wang, Guangzhou, CN;
Jixing Chai, Guangzhou, CN;
SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, CN;
Abstract
A preparation method for growing a germanium sulfide (GeS) single-crystal thin film on a SiOsubstrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si/SiOsubstrate or a SiOglass substrate; photoetching the substrate, spin-coating a photoresist, and performing photoetching and dry etching or wet etching to obtain a groove pattern; depositing a germanium (Ge)-crystal layer in the groove pattern of the substrate to obtain a treated substrate; and putting the treated substrate into a chemical vapor deposition (CVD) device for growth, a growth source being high-purity sulfur (S) powder and high-purity Ge powder, thereby obtaining a GeSsingle-crystal thin film on the SiOsubstrate. The preparation method can grow GeSsingle crystals on the SiOsubstrate. The GeSsingle crystals have a high crystalline quality and a small surface roughness.