San Jose, CA, United States of America

Jiunn-Yau Liou


Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 1988

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2 patents (USPTO):Explore Patents

Title: The Innovations of Jiunn-Yau Liou

Introduction

Jiunn-Yau Liou is a prominent inventor based in San Jose, CA. He has made significant contributions to the field of memory devices, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of random access memory systems.

Latest Patents

One of Jiunn-Yau Liou's latest patents is for a "Random access memory device with block reset." This invention provides an apparatus for storing data that can receive reset control signals. It comprises a plurality of storage blocks, each containing an array of memory units for storing data. The design allows for resetting along storage block boundaries, improving data management. Another notable patent is the "On-chip pulse-width control circuit for SRAM memories." This circuit features several banks of capacitors, with a single fuse controlling their connection to pulse-width-determining nodes. This innovation allows for simultaneous adjustment of pulse-width across all address-transition-detect pulse generators by blowing a single fuse.

Career Highlights

Jiunn-Yau Liou is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work there has been instrumental in advancing memory technology, contributing to the development of more efficient and reliable memory systems.

Collaborations

Throughout his career, Jiunn-Yau Liou has collaborated with notable colleagues, including May-Lin Lee and Moon S Kok. These partnerships have fostered innovation and have been crucial in the development of his patented technologies.

Conclusion

Jiunn-Yau Liou's contributions to memory technology through his patents and work at Advanced Micro Devices Corporation highlight his role as a key innovator in the field. His inventions continue to influence the design and functionality of memory devices, showcasing the importance of innovation in technology.

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