Hwaseong-si, South Korea

Jinwoo Kim

This inventor holds 1 USPTO granted patent. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jinwoo Kim. Retrieved from https://idiyas.com/inventor/jinwoo-kim-74m3su3c

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jinwoo Kim: Semiconductor Transistor Innovation

Introduction

Jinwoo Kim is an inventor based in Hwaseong-si, South Korea. His listed patent work concerns semiconductor transistors designed to provide various operating voltages.

Latest Patents

Kim is associated with one patent, 1 patent, titled “Semiconductor Transistors Providing Various Operating Voltages.” The invention describes a semiconductor device with four substrate regions and corresponding gate structures. The structures use combinations of gate dielectric and conductive layers, with different elements incorporated into certain dielectric layers. This arrangement supports transistor structures designed for different operating voltages.

Career Highlights

The available information highlights Kim’s work on semiconductor device architecture, particularly the design of gate structures and dielectric layers for transistors operating at varied voltages.

Collaborations

Juyoun Kim and Sangjung Kang are identified as some of Kim’s coworkers.

Conclusion

Jinwoo Kim’s listed patent reflects an inventive contribution to semiconductor transistor design, using varied gate structures and dielectric compositions to support different operating voltages.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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