Jinsook Kim

Title: Jinsook Kim: Innovator in Memory Technology

Introduction

Jinsook Kim is a notable inventor based in Sunnyvale, CA, recognized for his contributions to memory technology. He holds a patent that addresses critical issues in static random access memory (SRAM) systems. His innovative approach focuses on enhancing reliability while minimizing power consumption.

Latest Patents

Jinsook Kim's most recent patent is titled "High reliable and low power static random access memory." This invention presents systems and methods for accessing data to and from memory. The memory component utilizes an optimized buffer that provides a single precharge control signal. This facilitates precharging bitlines, y-decoders, input/output lines, and other components associated with buffer cells. The design aims to optimize timing control during operations, thereby reducing errors caused by charge sharing problems. Additionally, the optimized buffer includes an x-decoder that employs a JIT power component. This feature enables a wordline associated with buffer cells to be activated only for the duration necessary to read or write data, effectively minimizing access time and power consumption.

Career Highlights

Jinsook Kim has made significant strides in the field of memory technology through his work at Spansion LLC. His expertise in developing efficient memory systems has positioned him as a key player in the industry.

Collaborations

Throughout his career, Jinsook has collaborated with talented individuals such as Nian Niles Yang and Hung-Jen Lin. These partnerships have contributed to the advancement of innovative memory solutions.

Conclusion

Jinsook Kim's work in memory technology exemplifies the importance of innovation in enhancing system performance and energy efficiency. His contributions continue to influence the field and pave the way for future advancements.