Company Filing History:
Years Active: 2019
Title: Jingjing Ma: Innovator in Silicon-on-Insulator Technology
Introduction
Jingjing Ma is a prominent inventor based in Wuxi New District, China. She has made significant contributions to the field of semiconductor technology, particularly in the development of silicon-on-insulator devices. Her innovative work has led to the creation of a patented technology that enhances device performance and reliability.
Latest Patents
Jingjing Ma holds a patent for a "Silicon-on-insulator device and intermetallic dielectric layer structure thereof and manufacturing method." This invention features an intermetallic dielectric layer structure that includes a silicon-rich oxide layer covering a metal interconnect, a fluorine-silicon glass layer, and a non-doped silicate glass layer. The silicon-rich oxide layer, with a thickness of 700 angstroms ±10%, effectively captures movable ions, preventing them from passing through and causing potential damage to the device. This innovation significantly improves the integrity evaluation of the gate oxide layer.
Career Highlights
Jingjing Ma is currently employed at CSMC Technologies Fab1 Co., Ltd., where she continues to advance her research and development efforts in semiconductor technology. Her work has been instrumental in enhancing the performance of silicon-on-insulator devices, making her a valuable asset to her company and the industry.
Collaborations
Jingjing has collaborated with notable colleagues, including Zhiyong Wang and Dejin Wang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Jingjing Ma's contributions to silicon-on-insulator technology exemplify her dedication to innovation in the semiconductor field. Her patented work not only enhances device performance but also addresses critical challenges in the industry. Her ongoing efforts at CSMC Technologies Fab1 Co., Ltd. continue to shape the future of semiconductor technology.