Company Filing History:
Years Active: 2013
Title: Innovations by Jingfeng Yang in Semiconductor Reliability Testing
Introduction
Jingfeng Yang is a notable inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of reliability testing. His innovative methods aim to enhance the efficiency and accuracy of testing semiconductor devices.
Latest Patents
Jingfeng Yang holds a patent for a method of testing the reliability of semiconductor devices, specifically addressing negative bias temperature instability (NBTI). The patented method involves several steps, including measuring the NBTI curve of a first set of semiconductor devices, assessing 1/f noise power spectrum density and drain current at a predetermined frequency, and evaluating the equivalent oxide thickness (EOT) of gate dielectrics. This method not only saves time in testing large numbers of semiconductor devices but also prevents damage to the devices being tested.
Career Highlights
Jingfeng Yang is affiliated with Peking University, where he continues to advance research in semiconductor reliability. His work has garnered attention for its practical applications in improving the performance and longevity of semiconductor devices.
Collaborations
Jingfeng Yang collaborates with esteemed colleagues, including Xiaoyan Liu and Jiaqi Yang, who contribute to his research endeavors. Their combined expertise enhances the quality and impact of their work in the field.
Conclusion
Jingfeng Yang's innovative approach to testing semiconductor reliability represents a significant advancement in the industry. His contributions not only streamline testing processes but also ensure the integrity of semiconductor devices.