This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Xiamen Silan Advanced Compound Semiconductor Co., Ltd. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Jingfeng Bi and Semiconductor Light-Emitting Innovation.
Introduction
Jingfeng Bi is an inventor based in Xiamen, China, associated with Xiamen Silan Advanced Compound Semiconductor Co., Ltd. His patent work includes a semiconductor light-emitting element designed to improve device performance.
Latest Patents
Bi is credited with 1 patent: “Semiconductor Light Emitting Element and Manufacture Method Thereof.” The invention describes a device built from a substrate, an n-type semiconductor layer, a quantum well layer, and a p-type semiconductor layer. It also incorporates surface-plasmon-related layers in specified positions within or above the semiconductor structure. The patent states that this arrangement can improve quantum efficiency, light-emission uniformity, and resistance to electrostatic discharge.
Career Highlights
Bi’s listed patent reflects work on semiconductor optoelectronic devices and their manufacturing methods. The invention focuses on layer placement as a way to enhance the performance and reliability of a light-emitting element.
Collaborations
Jinjian Zheng and Moran Gao are identified as Bi’s coworkers. The available information does not specify their roles in the patent or the extent of their collaboration.
Conclusion
Jingfeng Bi’s patent describes a layered semiconductor light-emitting design intended to improve efficiency, uniformity, and electrostatic-discharge resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile