Shanghai, China

Jing Xie

This inventor holds 27 USPTO granted patents and 10 published patent applications, plus 2 CIPO patents and 6 EPO patents, primarily in Refrigeration Technology. Top assignees: Shanghai Ocean University, Samsung Electronics Co., Ltd., Shanghai Haiyan Pharmaceutical Technology Co., Ltd.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jing Xie. Retrieved from https://idiyas.com/inventor/jing-xie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 66.7

 

 

Average Co-Inventor Count = 5.1

ph-index = 4

Forward Citations = 38(Granted Patents)


Company Filing History:


Years Active: 2005-2026

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Areas of Expertise:
Refrigerated Container
Voltage Regulation
Marine Refrigeration
Antibacterial Film
Display Panel
Ice Glaze
Essential Oils
Pharmaceutical Composition
Freezing Method
Jet Nozzle
Transport Method
Texture Detection
27 patents (USPTO):Explore Patents

Title: Inventor Jing Xie - Revolutionizing Technology in Shanghai

Introduction: Jing Xie is a pioneering inventor based in Shanghai, China, known for her groundbreaking contributions to the field of technology.

Latest Patents: Jing Xie holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing her innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Jing Xie has worked with top research institutions and leading tech companies, consistently pushing the boundaries of technological advancements.

Collaborations: Throughout her career, Jing Xie has collaborated with renowned scientists, engineers, and inventors from around the world, fostering a culture of innovation and knowledge exchange.

Conclusion: Jing Xie's passion for innovation and her relentless pursuit of technological excellence continue to inspire the next generation of inventors and shape the future of technology in Shanghai and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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