Location History:
- Shaanxi, CN (2021)
- Xi'an, CN (2021 - 2023)
Company Filing History:
Years Active: 2021-2023
Title: Innovations of Jing Ning in GaN Technology
Introduction
Jing Ning is a prominent inventor based in Xi'an, China, known for her contributions to the field of gallium nitride (GaN) technology. With a total of 3 patents, she has made significant strides in developing advanced semiconductor devices.
Latest Patents
One of her latest patents is titled "Low turn-on voltage GaN diodes having anode metal with consistent crystal orientation and preparation method thereof." This invention focuses on a low turn-on voltage GaN diode that features an anode metal with a consistent crystal orientation. The design includes a substrate layer, a GaN buffer layer, a GaN channel layer, and an AlGaN barrier layer, arranged sequentially. The diode also incorporates a cathode on the AlGaN barrier layer and a groove in the GaN channel layer, with the anode positioned on the groove's bottom and side walls.
Another notable patent is the "Epitaxial lift-off process of graphene-based gallium nitride." This invention addresses the challenges associated with complex lift-off techniques and high costs in GaN film production. The process involves growing graphene on polished copper foil, transferring it onto a sapphire substrate, and subsequently growing the GaN epitaxial layer. The innovative use of graphene helps alleviate stress from lattice mismatches and facilitates the lifting and transferring of the epitaxial layer.
Career Highlights
Jing Ning is affiliated with Xidian University, where she continues to advance her research in semiconductor technologies. Her work has garnered attention for its potential applications in various electronic devices.
Collaborations
Jing collaborates with notable colleagues, including Jincheng Zhang and Dong Wang, who contribute to her research endeavors.
Conclusion
Jing Ning's innovative work in GaN technology showcases her expertise and commitment to advancing semiconductor applications. Her patents reflect significant advancements that could impact the future of electronic devices.