The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Sep. 28, 2016
Xidian University, Xi'an, CN;
Jincheng Zhang, Xi'an, CN;
Jing Ning, Xi'an, CN;
Dong Wang, Xi'an, CN;
Zhibin Chen, Xi'an, CN;
Zhiyu Lin, Xi'an, CN;
Yue Hao, Xi'an, CN;
Xidian University, Xi'an, CN;
Abstract
The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively. The gallium nitrate thin film according to an embodiment comprises the following structures in order from bottom to top: a substrate (), a graphene layer (), an aluminum nitride nucleation layer () fabricated by using a magnetron sputtering method, an aluminum nitride transition layer () grown by MOCVD, and a first and a second gallium nitrate layer () having different V-III ratios.