Singapore, Singapore

Jing Lin

This inventor holds 1 USPTO granted patent. Top assignee: Tinggi Technologies Private Limited. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jing Lin. Retrieved from https://idiyas.com/inventor/jing-lin-5g2e1pp0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Innovations by Jing Lin in Semiconductor Device Fabrication

Introduction

Jing Lin is a notable inventor based in Singapore, SG. He has made significant contributions to the field of semiconductor device fabrication. His innovative approach has led to the development of a unique process that enhances the efficiency of semiconductor devices.

Latest Patents

Jing Lin holds 1 patent for his invention titled "Localized annealing during semiconductor device fabrication." This process involves the fabrication of semiconductor devices on a substrate, which includes at least one metal layer. The method consists of removing the substrate and applying a second substrate, followed by annealing the metal layer through the application of a beam of electromagnetic radiation.

Career Highlights

Jing Lin is currently employed at Tinggi Technologies Private Limited, where he continues to work on advancing semiconductor technologies. His expertise in this area has positioned him as a valuable asset to his company and the industry at large.

Collaborations

Jing Lin collaborates with various professionals in his field, including his coworker, Shu Yuan. Their combined efforts contribute to the innovative projects at Tinggi Technologies Private Limited.

Conclusion

Jing Lin's work in semiconductor device fabrication exemplifies the impact of innovation in technology. His patent and ongoing contributions highlight the importance of advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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