Thuwal, Saudi Arabia

Jing-Kai Huang


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2022

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2 patents (USPTO):Explore Patents

Title: Innovations of Jing-Kai Huang

Introduction

Jing-Kai Huang is a prominent inventor based in Thuwal, Saudi Arabia. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on advancing semiconductor devices and their applications.

Latest Patents

One of his latest patents is titled "Semiconductor device having a lateral semiconductor heterojunction and method." This invention involves a method for forming a semiconductor device that includes a lateral semiconductor heterojunction. The process begins with the formation of a first metal chalcogenide layer adjacent to a first metal electrode on a substrate. This layer contains the same metal as the first metal electrode, ensuring compatibility and efficiency. A second metal chalcogenide layer is then formed adjacent to the first layer, followed by the creation of a second metal electrode. This innovative approach enhances the performance and reliability of semiconductor devices.

Career Highlights

Jing-Kai Huang is affiliated with the King Abdullah University of Science and Technology, where he conducts research and development in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

He collaborates with notable colleagues, including Ming-Yang Li and Lain-Jong Li, to further advance the field of semiconductor research. Their combined expertise contributes to innovative solutions and breakthroughs in technology.

Conclusion

Jing-Kai Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in electronic devices and materials.

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