Gyunggi-do, South Korea

Jin Won Park

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Won Park. Retrieved from https://idiyas.com/inventor/jin-won-park-u5xt1ygk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Jin Won Park: Inventor in Circuit-Pattern Inspection

Introduction

Jin Won Park is an inventor associated with Gyunggi-do, South Korea, and Samsung Electro-Mechanics Co., Ltd. Her patent work addresses non-contact inspection of circuit patterns on substrates.

Latest Patents

Park is credited with 1 patent, titled “Method of Inspecting Defects in Circuit Pattern of Substrate.” The method uses a laser beam directed at an inspection-target circuit pattern and a probe beam directed at a connected circuit pattern. By measuring whether the probe beam is diffracted and recording its diffraction angle, the method can identify defects without contact pressure. The approach is intended to reduce measurement errors and inspection time.

Career Highlights

Park’s disclosed invention focuses on improving the accuracy and efficiency of circuit-pattern inspection through non-contact optical measurement. Her work is associated with Samsung Electro-Mechanics Co., Ltd.

Collaborations

The provided information names Seung Seoup Lee and Tak Gyum Kim as Park’s coworkers. It does not specify their roles in the patent or the invention.

Conclusion

Jin Won Park’s patent describes a non-contact optical method for inspecting substrate circuit patterns, with the goal of reducing measurement errors and shortening inspection time.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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