Daejoen, South Korea

Jin Won Oh

This inventor holds 1 USPTO granted patent. Top assignee: Korea Advanced Institute of Science and Technology. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Won Oh. Retrieved from https://idiyas.com/inventor/jin-won-oh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Jin Won Oh - Innovator in Pressure Sensor Technology.

Introduction

Jin Won Oh is a notable inventor based in Daejeon, South Korea. He has made significant contributions to the field of sensor technology, particularly with his innovative designs that enhance the functionality and sensitivity of pressure sensors.

Latest Patents

Jin Won Oh holds a patent for a "Transparent and highly sensitive pressure sensor with improved linearity and pressure sensitivity." This invention features a first substrate with a micropattern of pyramidal structures, a first electrode layer, a second substrate, and a second electrode layer. The design ensures that the first and second substrates maintain a difference in light refractive index of 10% or less in the visible light region, which enhances the sensor's performance.

Career Highlights

Jin Won Oh is affiliated with the Korea Advanced Institute of Science and Technology, where he continues to push the boundaries of sensor technology. His work has garnered attention for its innovative approach and practical applications in various industries.

Collaborations

Jin has collaborated with talented individuals such as Steve Park and Han Byul Choi, who contribute to the advancement of technology in their respective fields.

Conclusion

Jin Won Oh's contributions to pressure sensor technology exemplify the spirit of innovation. His work not only advances scientific understanding but also paves the way for future developments in sensor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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