Chungcheongbuk-do, South Korea

Jin Soo Kim

This inventor holds 2 USPTO granted patents. Top assignees: Lg Semicon, Lg Semicon Co., Ltd.. Active years: 2003-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Soo Kim. Retrieved from https://idiyas.com/inventor/jin-soo-kim-8tt4lqon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 50.0

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2003-2004

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2 patents (USPTO):Explore Patents

Title: Innovations of Jin Soo Kim

Introduction

Jin Soo Kim is a notable inventor based in Chungcheongbuk-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his expertise and innovative spirit.

Latest Patents

One of Jin Soo Kim's latest patents is titled "Mask ROM cell and method of fabricating the same." This invention includes a semiconductor substrate of a first conductivity type, along with a plurality of impurity diffusion regions of a second conductivity type. These regions are formed in the semiconductor substrate in one direction, maintaining a predetermined distance between them. The patent also describes an insulating layer formed on a portion of the semiconductor substrate, corresponding to each impurity diffusion region, and a gate insulating layer formed on the semiconductor substrate. Additionally, a plurality of conductive lines are formed on the gate insulating layer and insulating layer at predetermined intervals, perpendicular to the impurity diffusion regions.

Another patent under the same title, "Mask ROM cell and method of fabricating the same," presents a similar concept but with slight variations. It includes a semiconductor substrate of a first conductivity type and a plurality of impurity diffusion regions of a second conductivity type, formed in the semiconductor substrate in one direction. This version features an insulating layer on a portion of the semiconductor substrate, corresponding to each impurity diffusion region, and a gate insulating layer formed on only a portion of the semiconductor substrate, situated between the impurity diffusion regions. The conductive lines are also formed on the gate insulating layer and insulating layer at predetermined intervals, maintaining a perpendicular orientation to the impurity diffusion regions.

Career Highlights

Throughout his career, Jin Soo Kim has worked with prominent companies in the semiconductor industry, including LG Semicon and LG Semicon Co., Ltd. His experience in these organizations has contributed to his development as an inventor and has allowed him to refine his skills in semiconductor technology.

Collaborations

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Conclusion

Jin Soo Kim's contributions to semiconductor technology through his patents reflect his innovative mindset and dedication to advancing the field. His work continues to influence the industry and inspire future inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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