This inventor holds 1 USPTO granted patent. Top assignee: Korea Institute of Science and Technology. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: Innovations of Jin-Seock Ma in Spin Transistor Technology
Introduction
Jin-Seock Ma is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on spin transistors. His research focuses on enhancing device miniaturization and high-density integration, which are crucial for the advancement of modern electronics.
Latest Patents
Jin-Seock Ma holds a patent for a spin transistor utilizing perpendicular magnetization. This invention is designed to facilitate device miniaturization and high-density integration. The spin transistor comprises a semiconductor substrate with a channel layer, ferromagnetic source and drain that are magnetized perpendicularly to the channel layer's surface, and a gate that adjusts the spins of electrons passing through the channel. The technology allows for the injection of spin-polarized electrons from the source into the channel layer, where they undergo precession due to a spin-orbit coupling induced magnetic field, influenced by the gate voltage.
Career Highlights
Jin-Seock Ma is affiliated with the Korea Institute of Science and Technology, where he continues to push the boundaries of semiconductor research. His work has garnered attention for its potential applications in next-generation electronic devices.
Collaborations
Jin-Seock Ma collaborates with notable colleagues, including Hyun-Cheol Koo and Suk-Hee Han, who contribute to his research endeavors and help advance the field of spintronics.
Conclusion
Jin-Seock Ma's innovative work on spin transistors represents a significant advancement in semiconductor technology. His contributions are paving the way for future developments in high-density integration and miniaturization of electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
