Seoul, South Korea

Jin Hyuk Park

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Sds Co., Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Hyuk Park. Retrieved from https://idiyas.com/inventor/jin-hyuk-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Jin Hyuk Park: Innovator in Edge Computing Technology

Introduction

Jin Hyuk Park is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of edge computing, showcasing his expertise through innovative patents. His work focuses on enhancing the efficiency and functionality of edge devices.

Latest Patents

One of Jin Hyuk Park's notable patents is titled "Method and system for distributing application for edge computing devices." This patent outlines a method for distributing applications across edge computing devices. The process involves selecting a cluster of edge devices, distributing applications, modifying routing information, and replacing existing applications to optimize performance.

Career Highlights

Jin Hyuk Park is currently employed at Samsung SDS Co., Ltd., where he continues to develop cutting-edge technologies. His role at Samsung allows him to work on innovative projects that push the boundaries of edge computing.

Collaborations

Throughout his career, Jin Hyuk Park has collaborated with talented individuals such as Kyu Yull Yi and Hyo Keun Choi. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Jin Hyuk Park is a key figure in the realm of edge computing, with a focus on improving application distribution methods. His contributions through patents and collaborations highlight his commitment to innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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