Seoul, South Korea

Jin Hyoung Lee

This inventor holds 21 USPTO granted patents and 4 published patent applications and 2 EPO patents, primarily in Embedded UICC Technology. Top assignees: Kt Corporation, Samsung Electronics Co., Ltd.. Active years: 2015-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Hyoung Lee. Retrieved from https://idiyas.com/inventor/jin-hyoung-lee-vkssss8c

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 90.5

 

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 91(Granted Patents)


Company Filing History:


Years Active: 2015-2021

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Areas of Expertise:
Embedded UICC
Profile Management
Subscriber Authentication
Secure Infrastructure
SIM Profile
Network Provider
Smartcard Rights
Trust Relationship
Terminal Device
Device Authentication
21 patents (USPTO):Explore Patents

Title: Inventor Jin Hyoung Lee: Revolutionizing Technology in Seoul

Introduction: Jin Hyoung Lee is a pioneering inventor based in Seoul, South Korea, known for her groundbreaking contributions to the field of technology.

Latest Patents: Jin Hyoung Lee holds several patents in the areas of artificial intelligence, robotics, and sustainable energy solutions, showcasing her innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Jin Hyoung Lee has worked with leading tech companies and research institutions to develop cutting-edge technologies that have had a significant impact on various industries.

Collaborations: Throughout her career, Jin Hyoung Lee has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange to drive technological advancements.

Conclusion: Jin Hyoung Lee's passion for innovation and her relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology in Seoul and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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