Gyeongsangbuk-do, South Korea

Jin Hong An

This inventor holds 2 USPTO granted patents. Top assignee: Goldstar Electron Co., Ltd.. Active years: 1994-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Hong An. Retrieved from https://idiyas.com/inventor/jin-hong-an-wzhyi894

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 441(Granted Patents)


Location History:

  • Kyungki-do, KR (1994)
  • Kyungsangbuk-do, KR (2001)

Company Filing History:


Years Active: 1994-2001

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2 patents (USPTO):Explore Patents

Title: Innovations of Jin Hong An: A Focus on Advanced Semiconductor Technologies

Introduction

Jin Hong An, an accomplished inventor based in Kyungsangbuk-do, South Korea, has made significant contributions to the field of semiconductor technology. With a total of two patents to his name, he has been instrumental in advancing memory device technologies, particularly through his work at Goldstar Electron Co., Ltd. His innovative solutions address critical challenges in memory devices, enhancing performance and efficiency.

Latest Patents

Jin Hong An's latest patents showcase his expertise and inventive spirit. The first patent is for an X-ROM semiconductor memory device. This innovative memory device employs both metal changeable GND lines and polysilicon changeable GND lines. The strategic positioning of these lines enhances the efficiency of the device, allowing for better integration and functionality. Odd polysilicon GND lines connect to one metal line, while even polysilicon GND lines connect to another, optimizing the overall design and performance.

The second patent focuses on a DRAM having bidirectional global bit lines. This design introduces local bit lines connected to memory cells, enabling bidirectional data access. The innovative structure allows for improved placement of sense amplifiers and switching elements without compromising DRAM characteristics. By implementing an open bit line structure instead of a folded one, this invention significantly enhances packing efficiency and signal-to-noise characteristics.

Career Highlights

Throughout his career at Goldstar Electron Co., Ltd., Jin Hong An has demonstrated a commitment to developing cutting-edge semiconductor technologies. His work has not only contributed to the company’s reputation as a leader in the electronics industry but has also paved the way for innovative applications in various electronic devices.

Collaborations

While specific collaborations have not been detailed, the impact of Jin Hong An's work is likely supported by teamwork with engineers and researchers at Goldstar Electron Co., Ltd. Collaborative efforts play a vital role in the development and refinement of semiconductor technologies, enabling advancements that benefit the industry as a whole.

Conclusion

Jin Hong An's innovative patents and contributions to semiconductor memory technology underscore his position as a prominent inventor in the field. His work at Goldstar Electron Co., Ltd. highlights the importance of continuous advancements in technology, ensuring the development of efficient and effective electronic devices. As he continues to innovate, the potential for further breakthroughs in semiconductor technology remains vast and promising.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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