Gumi, South Korea

Jin Han Bae

This inventor holds 1 USPTO granted patent. Top assignee: Magnachip Semiconductor, Inc.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jin Han Bae. Retrieved from https://idiyas.com/inventor/jin-han-bae-vxpcr4tf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Jin Han Bae: Innovator in Semiconductor Technology

Introduction

Jin Han Bae is a prominent inventor based in Gumi-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Jin Han Bae holds a patent for a "Method of forming and packaging semiconductor die." This patent outlines a comprehensive manufacturing and packaging method for semiconductor dies. The process involves preparing a wafer with a seal-ring region, forming interlayer insulating films, creating metal wiring, and applying passivation layers. The method also includes etching and dicing the wafer into semiconductor dies, showcasing Bae's expertise in semiconductor fabrication.

Career Highlights

Jin Han Bae is currently employed at Magnachip Semiconductor, Inc., where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the efficiency and reliability of semiconductor devices.

Collaborations

He collaborates with notable colleagues, including Jae Sik Choi and Jin Won Jeong, contributing to a dynamic team focused on innovation in semiconductor technology.

Conclusion

Jin Han Bae's contributions to semiconductor technology through his patent and work at Magnachip Semiconductor, Inc. highlight his role as a key innovator in the industry. His advancements continue to shape the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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