Jin Changming

Title: **Innovations by Jin Changming: Pioneering Porous Dielectric Materials**

Introduction

Jin Changming is an esteemed inventor based in Dallas, TX, who has significantly contributed to the field of semiconductor technology. As a professional associated with Texas Instruments Corporation, he holds two patents, focusing on improvements in porous dielectric materials.

Latest Patents

One of Jin Changming's notable inventions is entitled "Porous dielectric material with improved pore surface properties." This invention provides an innovative solution for creating an enhanced porous structure designed specifically for semiconductor devices. The process outlined in the patent involves the application of an existing porous structure that can be deposited between patterned conductors. The method includes providing a substrate that comprises a microelectronic circuit along with a porous silica layer. This layer is characterized by an average pore diameter ranging from 2 to 80 nm. The heating of the substrate occurs at temperatures between 100 and 490 degrees Celsius in a substantially halogen-free atmosphere. This process leads to significant improvements in the dielectric properties of the porous dielectric material. Notably, the invention incorporates the use of phenyl-containing compounds, such as hexaphenyldisilazane, during the treatment, resulting in a porous structure that exhibits improved dielectric properties compared to untreated samples.

Career Highlights

During his tenure at Texas Instruments Corporation, Jin Changming has focused on advancing technologies that impact the semiconductor industry. His work has not only led to multiple patents but also contributed to the innovation of modern microelectronic circuits. Jin's expertise lies in the intersection of material science and semiconductor applications, marking him as a key inventor in his field.

Collaborations

Jin has collaborated with notable colleagues, including Bruce E. Gnade and Douglas M. Smith, further enhancing the development of cutting-edge technologies within Texas Instruments Corporation. This collaborative approach fosters innovation and the exploration of new ideas within semiconductor materials.

Conclusion

Jin Changming's contributions to the field of semiconductor technology illustrate his commitment to advancing material sciences. With a focus on porous dielectric materials, his inventions are poised to make a lasting impact on the performance of microelectronic devices. As he continues to innovate, Jin is sure to be a vital figure in the ongoing evolution of semiconductor technologies.