Jin Bae Bang

Title: The Innovations of Jin Bae Bang

Introduction

Jin Bae Bang is a prominent inventor based in Anyang-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 4 patents. His work is primarily associated with Samsung Electronics Co., Ltd., where he continues to push the boundaries of technology.

Latest Patents

Among his latest patents is a nonvolatile memory device configured to adjust a read parameter based on degradation level. This innovative device includes a page buffer with multiple latch sets that latch each page datum of selected memory cells. The control logic detects the degradation level of the memory cells and determines the appropriate read parameter based on this detection. Another notable patent is for a memory device that features a page buffer unit with several latches that latch dummy data of selected memory cells. This device includes control logic that compares count values and corrects the level of a read signal during read operations.

Career Highlights

Jin Bae Bang has established himself as a key figure in the development of advanced memory technologies. His work at Samsung Electronics Co., Ltd. has led to innovations that enhance the performance and reliability of memory devices. His patents reflect a deep understanding of the challenges faced in memory technology and a commitment to finding effective solutions.

Collaborations

Throughout his career, Jin Bae Bang has collaborated with talented individuals such as Seung Hwan Song and Dae Seok Byeon. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in memory technology.

Conclusion

Jin Bae Bang's contributions to the field of memory devices are noteworthy and impactful. His innovative patents and collaborations highlight his dedication to advancing technology. His work continues to influence the future of memory devices and their applications.