Samsung Electronics Co., Ltd.

Jin Bae Bang

Il Han Park

Dae Seok Byeon

Hyun Jun Yoon

Han Jun Lee

Joon Suc Jang

Seung Hwan Song

Na Young Choi

A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.

Nonvolatile memory device configured to adjust a read parameter based on degradation level

A memory device includes a page buffer unit including a plurality of latches latching each of a plurality of pieces of dummy data of selected memory cells according to a plurality of dummy signals provided by a word line of the selected memory cells, and a control logic comparing a count value of a first count latch among the plurality of latches with a reference count value, determining whether to count a second count latch other than the first count latch according to a result of the comparison, and correcting a level of a read signal provided by the word line of the selected memory cells in a read operation.

Memory device

Nonvolatile memory device configured to adjust a read parameter based on a degradation level

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Anyang-si, South Korea

Jin Bae Bang