Seoul, South Korea

Jihyeon Heo

This inventor holds 1 USPTO granted patent. Top assignees: Industry-University Cooperation Foundation Hanyang University, Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jihyeon Heo. Retrieved from https://idiyas.com/inventor/jihyeon-heo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jihyeon Heo: Inventor in Perovskite Photodiode Technology.

Introduction

Jihyeon Heo is an inventor associated with Seoul, South Korea. Her patent work includes a perovskite photodiode design intended for use in image sensors and electronic devices.

Latest Patents

Heo is named on 1 patent: “Perovskite Photodiode and Image Sensor and Electronic Device.” The invention describes a photodiode with two electrodes and a lead-free perovskite photoelectric conversion layer between them. An auxiliary layer sits between the first electrode and the conversion layer and includes a compound defined by a chemical formula in the patent specification.

Career Highlights

Heo’s listed organizational affiliations include Samsung Electronics and the Industry-University Cooperation Foundation at Hanyang University. These affiliations connect her patent record with both an electronics company and a university-industry collaboration organization.

Collaborations

Seon-Jeong Lim and Hui Joon Park are identified as Heo’s coworkers. Their shared association reflects collaborative activity connected with her professional and patent work.

Conclusion

Jihyeon Heo’s patent focuses on a lead-free perovskite photodiode architecture for image sensing and electronic devices, alongside affiliations with Samsung Electronics and Hanyang University’s industry-university cooperation foundation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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