Suwon, South Korea

Jihye Park

This inventor holds 1 USPTO granted patent and 8 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jihye Park. Retrieved from https://idiyas.com/inventor/jihye-park-20wxh4f6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jihye Park - Innovator in Semiconductor and Electronic Device Technologies.

Introduction: Jihye Park is a talented inventor based in Suwon-si, South Korea. She has made significant contributions to the fields of semiconductor devices and electronic technologies. Although she currently holds no granted patents, her innovative ideas are reflected in her latest patent applications.

Latest Patent Applications: Jihye Park's recent patent applications include a semiconductor device and an electronic device featuring a flexible display. The semiconductor device application describes a structure that includes lower electrodes on a substrate, a dielectric layer covering the lower electrodes, an upper electrode on the dielectric layer, and a mask pattern on the upper electrode. The design aims to enhance the performance and efficiency of semiconductor devices. The electronic device application outlines a flexible display that can change its size based on the movement of the housing. This innovative design allows for a dynamic user experience, where the display area can adapt to show different applications simultaneously.

Conclusion: Jihye Park is an emerging inventor whose work in semiconductor and electronic device technologies showcases her potential to contribute to future innovations. Her latest patent applications reflect her commitment to advancing technology in meaningful ways.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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