Company Filing History:
Years Active: 2012-2013
Title: Innovations of Jie Zhang in Semiconductor Technology
Introduction
Jie Zhang is a prominent inventor based in Starkville, MS (US), known for his contributions to semiconductor technology. With a total of 2 patents, he has made significant advancements in the field of epitaxial growth on silicon carbide substrates.
Latest Patents
Jie Zhang's latest patents include methods for epitaxially growing silicon carbide (SiC) layers on single crystal SiC substrates. One of his notable inventions describes a method that involves heating a single-crystal SiC substrate to a temperature of at least 1400°C in a chamber. The process includes introducing a carrier gas, a silicon-containing gas, and a carbon-containing gas into the chamber, followed by the epitaxial growth of a SiC layer on the substrate's surface. The substrate is heated at a rate of at least 30°C per minute, and the surface is inclined at an angle of 1° to 3° with respect to the basal plane of the substrate material.
Career Highlights
Throughout his career, Jie Zhang has worked with notable companies such as Ss Sc Ip, LLC and Power Integrations, Inc. His experience in these organizations has contributed to his expertise in semiconductor devices and epitaxial growth techniques.
Collaborations
Due to space constraints, the collaborations section will be omitted.
Conclusion
Jie Zhang's innovative work in semiconductor technology, particularly in epitaxial growth methods, showcases his significant contributions to the field. His patents reflect a deep understanding of materials science and engineering, positioning him as a key figure in advancing semiconductor technologies.