Company Filing History:
2 out of 25,601 
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1 out of 74 
Years Active: 1997-1998
Title: Jie Si: Innovator in Memory Device Technology
Introduction
Jie Si is a prominent inventor based in Blacksburg, VA (US). He has made significant contributions to the field of memory device technology, holding a total of 3 patents. His work focuses on advanced materials and processes that enhance the performance of dynamic random access memory devices.
Latest Patents
Jie Si's latest patents include innovative methods for metalorganic chemical vapor deposition (MOCVD) of (Ba.sub.1-x Sr.sub.x)RuO.sub.3. This technology is crucial for developing dynamic random access memory devices that incorporate a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer. The process involves several steps, including providing a semiconductor substrate, heating it, and exposing it to various precursors such as Ru(C.sub.5 H.sub.5).sub.2 and TiO(C.sub.2 H.sub.5).sub.4.
Career Highlights
Throughout his career, Jie Si has worked with notable organizations, including Sharp Kabushiki Kaisha Corporation and Virginia Tech Intellectual Properties, Inc. His expertise in memory device technology has positioned him as a key figure in the field.
Collaborations
Jie Si has collaborated with esteemed colleagues such as Chien-Hsiung Peng and Seshu B Desu. These partnerships have furthered advancements in memory device technology and contributed to the success of his innovative projects.
Conclusion
Jie Si's contributions to the field of memory devices through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the development of advanced memory technologies.