The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Jul. 12, 1995
Applicant:
Inventors:
Chien-Hsiung Peng, Blacksburg, VA (US);
Seshu B Desu, Blacksburg, VA (US);
Jie Si, Blacksburg, VA (US);
Assignee:
Virginia Polytechnic Institute and State University, Blacksburg, VA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
365145 ; 427124 ; 4274191 ;
Abstract
A ferroelectric memory device having a perovskite thin film of a rare earth manganate and processes for manufacturing the same. The perovskite thin film layer has properties consistent with high quality nonvolatile memory devices. The perovskite thin film layer can be applied by a MOCVD process, by a MOD process, or a liquid source delivery process, all of which are described.