Company Filing History:
Years Active: 2007
Title: Jie-Jie Xu: Innovator in Semiconductor Technology
Introduction
Jie-Jie Xu is a notable inventor based in Plano, Texas. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patented method that enhances the manufacturing process of semiconductor devices.
Latest Patents
Jie-Jie Xu holds a patent titled "Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing." This invention provides a method for manufacturing a metal silicide electrode for semiconductor devices. The method involves implanting small atoms into an nMOS semiconductor substrate to a depth of no greater than about 30 nanometers. Additionally, it includes depositing a transition metal layer over the substrate, which reacts with the nMOS semiconductor substrate to form the metal silicide electrode.
Career Highlights
Jie-Jie Xu is associated with Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has been instrumental in advancing semiconductor manufacturing techniques. He has a total of 1 patent to his name, showcasing his innovative contributions to the field.
Collaborations
Jie-Jie Xu has collaborated with talented coworkers, including Duofeng Yue and Peijun Chen. Their combined expertise has furthered the development of advanced semiconductor technologies.
Conclusion
Jie-Jie Xu's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work at Texas Instruments Corporation highlights the importance of collaboration and innovation in driving technological progress.