This inventor holds 1 USPTO granted patent. Top assignee: National University of Singapore. Active years: 2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016
Title: Jiatao Sun: Innovator in Graphene Technology
Introduction
Jiatao Sun is a prominent inventor based in Singapore, known for his significant contributions to the field of graphene technology. His innovative work focuses on enhancing the properties of graphene, a material with immense potential in various applications.
Latest Patents
One of Jiatao Sun's notable patents is related to the "Hole doping of graphene." This patent describes a layer of graphene that possesses a first work function, along with a metal oxide film placed on top of the graphene layer. The metal oxide film has a second work function that is greater than the first work function. This configuration allows for the transfer of electrons from the graphene layer to the metal oxide film, resulting in the formation of a hole accumulation layer within the graphene.
Career Highlights
Jiatao Sun is affiliated with the National University of Singapore, where he conducts research and develops innovative technologies. His work has garnered attention in the scientific community, contributing to advancements in materials science and engineering.
Collaborations
Jiatao Sun has collaborated with esteemed colleagues, including Zhenyu Chen and Lanfei Xie, to further explore the applications and implications of graphene technology.
Conclusion
Jiatao Sun's contributions to graphene research exemplify the innovative spirit of modern science. His work not only enhances our understanding of this remarkable material but also paves the way for future technological advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile