Company Filing History:
Years Active: 2022-2024
Title: The Innovative Journey of Jiashan Yin
Introduction
Jiashan Yin is an accomplished inventor based in Jiangyin, China, recognized for his significant contributions to the field of semiconductor technology. With a total of three patents to his name, Yin has made remarkable strides in enhancing the efficiency and reliability of semiconductor structures.
Latest Patents
Among his latest innovations, Jiashan Yin has developed a semiconductor structure and a method for preparing the same. This patented technology outlines a process involving the planarization of the copper (Cu) layer, followed by a wet etch process that effectively removes copper residues at the edges of Cu posts. The technology creates specific height differences between the Cu post, an insulating layer, and a silicon (Si) substrate. This strategic arrangement is designed to prevent electrical leakage and improve the overall electrical properties of semiconductor devices. Another noteworthy patent by Yin emphasizes a similar methodology to achieve enhanced insulation and performance in semiconductor applications.
Career Highlights
Jiashan Yin works at Sj Semiconductor (Jiangyin) Corporation, where he applies his expertise in semiconductor design and fabrication. His innovative approaches have garnered attention within the industry, showcasing the blend of creativity and technical knowledge that he brings to his work.
Collaborations
Throughout his career, Jiashan has collaborated with notable colleagues, including Zuyuan Zhou and Chengchung Lin. These partnerships have likely facilitated a dynamic exchange of ideas and fostered an environment conducive to innovation within the semiconductor field.
Conclusion
Jiashan Yin's work exemplifies the impactful role of inventors in advancing technology. His patents not only reflect his inventive spirit but also contribute to the broader progress of semiconductor engineering, promising improvements in device functionality and reliability for future applications.