Beijing, China

Jiaqi Yang


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Innovations by Jiaqi Yang in Semiconductor Reliability Testing

Introduction

Jiaqi Yang is an accomplished inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of reliability testing. His innovative methods aim to enhance the efficiency and accuracy of testing semiconductor devices.

Latest Patents

Jiaqi Yang holds a patent for a method of testing the reliability of semiconductor devices, specifically addressing negative bias temperature instability (NBTI). The patented method involves several steps, including measuring the NBTI curve of a first set of semiconductor devices, assessing 1/f noise power spectrum density and drain current at a predetermined frequency, and evaluating the equivalent oxide thickness (EOT) of gate dielectrics. This method not only saves time in testing large numbers of semiconductor devices but also prevents damage to the devices being tested.

Career Highlights

Jiaqi Yang is affiliated with Peking University, where he continues to advance research in semiconductor reliability. His work has garnered attention for its practical applications in improving the performance and longevity of semiconductor devices.

Collaborations

Jiaqi collaborates with notable colleagues, including Xiaoyan Liu and Jinfeng Kang, who contribute to his research endeavors. Their combined expertise enhances the quality and impact of their work in the semiconductor field.

Conclusion

Jiaqi Yang's innovative approach to testing semiconductor reliability represents a significant advancement in the industry. His contributions not only improve testing efficiency but also ensure the integrity of semiconductor devices.

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