Jiao Chen

Title: Jiao Chen - Innovator in Memory Technology

Introduction

Jiao Chen is a notable inventor based in Yokkaichi, Japan. He has made significant contributions to the field of memory technology, particularly in the development of innovative structures for three-dimensional memory systems. His work has implications for enhancing memory performance and efficiency in electronic devices.

Latest Patents

Jiao Chen holds a patent titled "Blocking oxide in memory opening integration scheme for three-dimensional memory structure." This invention involves the formation of an alternating stack of insulating layers and sacrificial material layers over a substrate. After creating a memory opening, all surfaces are converted to silicon oxide surfaces through the formation of at least one silicon oxide portion. A silicon nitride layer is then established within the memory opening. Following the creation of a memory stack structure, backside recesses can be formed using the silicon oxide portions as an etch stop. The process minimizes or eliminates damage to the outer layer of the memory stack structure by employing etch stop structures. This innovative approach allows for the subsequent formation of electrically conductive layers in the backside recesses.

Career Highlights

Jiao Chen is currently employed at Sandisk Technologies Inc., where he continues to advance memory technology. His expertise and innovative mindset have positioned him as a key player in the development of next-generation memory solutions.

Collaborations

Jiao has collaborated with notable colleagues, including Jongsun Sel and Chan Park, who contribute to the dynamic environment of innovation at Sandisk Technologies Inc.

Conclusion

Jiao Chen's contributions to memory technology exemplify the impact of innovative thinking in the electronics industry. His patent and ongoing work at Sandisk Technologies Inc. highlight his role as a leading inventor in this critical field.