This inventor holds 1 USPTO granted patent. Top assignee: Fudan University. Active years: 2022.
Company Filing History:
Years Active: 2022
Title: Innovations of Jianwei Lian in Non-Volatile Ferroelectric Memory
Introduction
Jianwei Lian is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of memory technology, particularly in the development of non-volatile ferroelectric memory. His innovative work has the potential to enhance data storage solutions in various applications.
Latest Patents
Jianwei Lian holds a patent for a non-volatile ferroelectric memory and the method of preparing the same. This patent describes a ferroelectric memory that includes a ferroelectric storage layer, a first electrode, and a second electrode. The first and second electrodes each consist of a buried conductive layer formed by patterning on the surface of the ferroelectric storage layer, along with an electrode layer placed on the buried conductive layer. When a write signal is applied between the first and second electrodes, the electric domains of a portion of the ferroelectric storage layer can be reversed, establishing a domain wall conductive passage that electrically connects the two electrodes.
Career Highlights
Jianwei Lian is affiliated with Fudan University, where he continues to advance research in memory technologies. His work is characterized by a strong focus on innovative solutions that address the challenges of data storage and retrieval.
Collaborations
Jianwei Lian collaborates with notable colleagues, including Anquan Jiang and Xiaojie Chai. Their combined expertise contributes to the advancement of research in the field of ferroelectric memory.
Conclusion
Jianwei Lian's contributions to non-volatile ferroelectric memory represent a significant advancement in memory technology. His innovative approach and collaboration with esteemed colleagues continue to drive progress in this important field.