This inventor holds 1 USPTO granted patent. Top assignee: Cypress Semiconductor Corporation. Active years: 2001.
Company Filing History:
Years Active: 2001
Title: Jianmin Oiao: Innovator in Semiconductor Technology
Introduction
Jianmin Oiao is a notable inventor based in Fremont, CA (US). He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for forming self-aligned contacts, which is crucial in the manufacturing of semiconductor devices.
Latest Patents
Jianmin Oiao holds 1 patent for his invention titled "Method and structure for making self-aligned contacts." This patent describes a method that includes forming structures with sidewalls, depositing a first insulating layer, and subsequently depositing a second insulating layer over it. The second insulating layer is then patterned to create a hard etch mask. Contact holes are etched through the second insulating layer using this hard etch mask, resulting in contact holes with lower aspect ratios compared to conventional methods. This innovation is particularly beneficial as it utilizes a second insulating layer with a low dielectric constant relative to other hard etch mask materials, such as silicon nitride.
Career Highlights
Jianmin Oiao is currently employed at Cypress Semiconductor Corporation, where he continues to advance semiconductor technologies. His work at Cypress has positioned him as a key player in the industry, contributing to the company's reputation for innovation and excellence.
Collaborations
Jianmin has collaborated with various professionals in his field, including his coworker James E Nulty. Their combined expertise has fostered advancements in semiconductor manufacturing processes.
Conclusion
Jianmin Oiao's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work at Cypress Semiconductor Corporation highlights the importance of collaboration and innovation in driving technological progress.