Lanzhou, China

Jianjun Wei

This inventor holds 1 USPTO granted patent. Top assignee: Stevens Institute of Technology. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jianjun Wei. Retrieved from https://idiyas.com/inventor/jianjun-wei-t3uy2wxt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Jianjun Wei and Tribochemical Polishing

Introduction

Jianjun Wei is an inventor associated with Lanzhou, China, and Stevens Institute of Technology. His patent work addresses tribochemical polishing, a process for finishing ceramic and metal surfaces through friction in a reactive liquid medium.

Latest Patents

Wei is associated with 1 patent: “Tribochemical Polishing of Ceramics and Metals.” The invention describes rubbing a selected ceramic or metal against a solid surface in a nonabrasive liquid that attacks the material only during friction. Examples include silicon, silicon nitride, silicon carbide, silicon oxide, titanium carbide, aluminum nitride, and tungsten. The method can polish both ceramic and metal surfaces, including surfaces in integrated-circuit damascene structures.

Career Highlights

Wei’s patent highlights an approach to surface finishing that relies on friction-activated chemical action rather than abrasive particles. The described process applies to a range of materials used in advanced manufacturing and electronics.

Collaborations

Wei’s listed coworkers include Traugott E. Fischer and Sangrok Hah. Their names are associated with the technical work surrounding the tribochemical polishing invention.

Conclusion

Jianjun Wei’s patent presents a tribochemical method for polishing selected ceramics and metals, with potential applications in precision manufacturing and integrated-circuit fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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