Company Filing History:
Years Active: 2021-2025
Title: Jiang-He Xie: Innovator in High-Electron-Mobility Transistor Technology
Introduction
Jiang-He Xie is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of High-Electron-Mobility Transistors (HEMTs). With a total of 6 patents to his name, Xie's work has advanced the capabilities of electronic devices.
Latest Patents
Among his latest patents, Xie has developed a method of manufacturing a High-Electron-Mobility Transistor. This method involves several steps, including preparing a substrate, forming a first buffer over the substrate, and creating a second buffer with a gradient of dopant concentration. Additionally, he has patented a HEMT design that incorporates a back barrier layer to block electron leakage and improve threshold voltage. This innovative design features a Gallium Nitride (GaN) layer and a front barrier layer, enhancing the performance of the semiconductor device.
Career Highlights
Jiang-He Xie is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in pushing the boundaries of HEMT technology, making significant strides in efficiency and performance.
Collaborations
Xie has collaborated with notable colleagues, including Ching-Yu Chen and Wei-Ting Chang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Jiang-He Xie's contributions to semiconductor technology, particularly in HEMT development, have established him as a key figure in the field. His innovative patents and collaborations continue to influence the future of electronic devices.